2N697

2N697 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N2218 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage =Total Device Dissipation (a TA 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCER v CBO Vebo PD Pd TJ< Tstg Value 40 60 5.0 0.6 4.0 2.0 13.3 - 65 to + 200 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted. OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltaged) dc = 100 mAdc, Rbe = 10 ohms) Collector-Base Breakdown Voltage dC = 100 /xAdc, l£ = 0) Emitter-Base Breakdown Voltage (IE = 100 ^Adc, lc = 0) Collector Cutoff Current (V C B = 30 Vdc, Ie = 0) (VC B = 30 Vdc, El = 0, TA = 150°C) ON CHARACTERISTICS DC Current Gain(1) dC = 150 mAdc, Vce = 10 Vdc) Collector-Emitter Saturation Voltaged) dC = 150 mAdc, Ib = 15 mAdc) Base-Emitter Saturation Voltaged) dC = ...