2N697

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 697 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 Collector Emitter Breakdown Voltage BVCER* IC=100mA,RBE=10Ω Emiter Base Breakdown Voltage BVEBO IE=100µA, IC=0 Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0,Ta=150ºC DC Current Gain hFE* IC=150mA,VCE=10V Collector Emitter Saturation Voltage VCE(Sat) * IC=150mA,IB=15mA Base Emitter Saturation Voltage VBE(Sat) * IC...