MXT3906

MXT3906 CASE 345-01, STYLE 1 SOT-89 GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol v CEO VCBO Vebo c PNP SILICON THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, Ta = 25°C Derate above 25°C PD Refer to 2N3905 for graphs. Storage Temperature T stg "Thermal Resistance Junction to Ambient RflJA "Package mounted on 99.5% alumina 10 x 12 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic Symbol Min OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage) 1) dC = 1.0 mAdc, Bl = 0) Collector-Base Breakdown Voltage dC = 10 MAdc, l£ = 0) v (BR)CEO V(BR)CBO 40 40 Emitter-Base Breakdown Voltage (IE = 10 ^Adc, cl = 0) Base Cutoff Current (Vce = 30 Vdc, V B E = 3.0 Vdc) Collector Cutoff Current (VC e = 30 Vdc, V BE = 3.0 Vdc) ON CHARACTERISTICS! 1) v (BR)EBO "BL ICEX 5.0 — — DC Current Gain d...