Silicon Power Schottky Diode
Features • High Surge Capability • Types up to 40V VRRM • Not ESD Sensitive
Note: 1. Standa...
Silicon Power
Schottky Diode
Features High Surge Capability Types up to 40V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N5829 thru 1N5831R
VRRM = 20 V - 40 V IF = 25 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N5829 (R)
1N5830 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms
20 14 20 25
800
-55 to 150 -55 to 150
25 17 25 25
800
-55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N5829 (R)
Diode forward voltage
Reverse current
Thermal characteristics Thermal resistance, junction case
VF IF = 25 A, T...
