1N5711

CENPAK ELECTRONICS Features 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Mechanical Data Case: DO-35 Glass Case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Colour band denotes cathode end Mounting Position: Any Weight: approx. 0.005 ounce, 0.14grams 1N5711 / 1N6263 Small Signal Schottky Barrier Diode Standard Glass Case JEDEC DO-35 Dimensions in inches and (mm) 0.020 (0.52) max 0.079 (2.0) max 1.0 (25.4) min 0.165 (4.2) max 1.0 (25.4) min Absolute Maximum Ratings Tamb =25 OC unless otherwise specified Parameter Test Condition Part Repetitive peak revers voltage 1N5711 1N6263 Peak forward surge current Power dissipation tp = 10 ms l = 4 mm, TL = constant Symbol VRRM VRRM I...