1N6263

1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. 3. This diode is also available in the Mini MELF case with type designation LL5711 and LL6263. Absolute Maximum Ratings(Tj=25℃) Parameter Peak inverse voltage Maximum single cycle surge 10us square wave Power dissipation Maximum junction temperature Storage temperature range Part 1N5711 1N6263 Symbol VRRM VRRM IFSM Ptot Tj TS Value 70 60 2.0 400 125 -55~+150 Unit V V A mW ℃ ℃ Electrical Characteristics(Tj=25℃) Parameter Reverse breakdown voltage Leakage current Forward voltage drop Junction capacitance Reverse recovery time Symbol Test Conditions Part Min Typ Max Unit V(BR)R IR=10μA (pulsed) 1N5711 70 - - V 1...