Features
For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a
PN juncti...
Features
For general purpose applications Metal-on-silicon
Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the MiniMELF case with type designation LL5711 and LL6263.
1N5711 and 1N6263
Small-Signal Diode
Schottky Diodes
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Peak inverse voltage Power dissipation (Infinite heatsink)
1N5711 1N6263
Maximum single cycle surge 10 us square wave
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
VRRM Ptot IFSM RθJA Tj TS
70 60 400 (1)
2.0
0.3 (1)
125 (1)
-55 to +150 (1)
Unit
Volts mW Amps oC/mW oC oC
...
