MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol MPSW92 MPSW93
VCEO 300 200
VCBO
300
200
VEBO
5.0
c 500
PD 1.0
8.0
Pd Tj. Tstg
2.5 20
-55 to +150
Unit Vdc Vdc Vdc
mAdc
Watt mW/°C Watts mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol R«uc RejA
Max
50 125
Unit °C/W °c/w
MPSW92 MPSW93
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
HIGH VOLTAGE
TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged)
c(l = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage c{l = 100 /iAdc, Ie = 0)
Emitter-Base Breakdown Voltage E(l = 100 iiAdc. lc = 0)
Collector Cu...