Document
BC109 Series
Low Power Bipolar Transistors
Feature:
• NPN Silicon Planar Epitaxial Transistors.
TO-18 Metal Can Package
Dimensions
A B C D E F G H J K L
Minimum Maximum
5.24 5.84
4.52 4.97
4.31 5.33
0.40 0.53
- 0.76
- 1.27
- 2.97
0.91 1.17
0.71 1.21
12.70
-
45° Dimensions : Millimetres
Pin Configuration: 1. Emitter 2. Base 3. Collector
Page 1
08/04/06 V1.0
BC109 Series
Low Power Bipolar Transistors
Absolute Maximum Ratings
Description
Symbol
BC109
Collector-Emitter Voltage
VCEO
25
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Resistance
Junction to Case
VCBO VEBO
IC
PD
TJ, Tstg
Rth (j-c)
30
5.0
0.2 0.6 2.28 1.0 6.67 -65 to +200
175
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description
Symbol
Test Condition
Minimum
Collector-Emitter Voltage E.