2N2060M

2N2060M SILICON DUAL NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (One Die) PD Power Dissipation (Both Dice) PD Power Dissipation (One Die, TC=25°C) PD Power Dissipation (Both Dice, TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 100 80 60 7.0 500 500 600 1.5 3.0 -65 to +200 UNITS V V V V mA mW mW W W °C ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=80V 2.0 IEBO VEB=5.0V 2.0 BVCBO IC=100μA 100 B...