MPS2369A

ON Semiconductort Switching Transistors NPN Silicon MPS2369 MPS2369A* MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol VCEO VCES VCBO VEBO IC PD TJ, Tstg Value 15 40 40 4.5 200 625 5.0 –55 to +150 Symbol RqJA Max 200 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C °C Unit °C/W *ON Semiconductor Preferred Device 1 2 3 CASE 29–11, STYLE 1 TO–92 (TO–226AA) COLLECTOR 3 2 BASE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) MPS2369A V(BR)CEO Collector–Emitter Breakdown Voltage (IC = 10 µAdc, VBE = 0) MPS2369,A V(BR)CES Collector–Base Breakdown Voltage ...