Document
BZX85B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Sharp edge in reverse characteristics Low reverse current Low noise Very high stability
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.3 175 –65...+175 Unit W °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 110 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V
Document Number 85607 Rev. 3, 01-Apr-99
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BZX85B...
Vishay Telefunken
Type BZX85B... 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 VZnom 1) V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 IZT mA 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 VZT and rzjT V W 2.64 to 2.76 < 20 2.94 to 3.06 < 20 3.24 to 3.36 < 20 3.52 to 3.68 < 20 3.82 to 3.98 < 15 4.22 to 4.38 < 13 4.60 to 4.80 < 13 5.00 to 5.20 < 10 5.48 to 5.72 <7 6.08 to 6.32 <4 6.66 to 6.94 < 3.5 7.35 to 7.65 <3 8.04 to 8.36 <5 8.92 to 9.28 <5 9.80 to 10.20 <7 10.78 to 11.22 <8 11.76 to 12.24 <9 12.74 to 13.26 < 10 14.70 to 15.30 < 15 15.70 to 16.30 < 15 17.64 to 18.36 < 20 19.60 to 20.40 < 24 21.55 to 22.45 < 25 23.5 to 24.5 < 25 26.4 to 27.6 < 30 29.4 to 30.6 < 30 32.4 to 33.6 < 35 35.3 to 36.7 < 40 38.2 to 39.8 < 50 for rzjk at IZK mA 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 IR at VR V < 150 1 < 100 1 < 40 1 < 20 1 < 10 1 <3 1 <3 1 <1 1.5 <1 2 <1 3 <1 4 <1 4.5 <1 6.2 <1 6.8 < 0.5 7.5 < 0.5 8.2 < 0.5 9.1 < 0.5 10 < 0.5 11 < 0.5 12 < 0.5 13 < 0.5 15 < 0.5 16 < 0.5 18 < 0.5 20 < 0.5 22 < 0.5 24 < 0.5 27 < 0.5 30 TKVZ %/K –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.07 to –0.02 –0.07 to –0.01 –0.03 to +0.04 –0.01 to +0.04 0 to +0.045 +0.01 to +0.055 +0.015 to +0.06 +0.02 to +0.065 0.03 to 0.07 0.035 to 0.075 0.04 to 0.08 0.045 to 0.08 0.045 to 0.085 0.05 to 0.085 0.055 to 0.09 0.055 to 0.09 0.06 to 0.09 0.06 to 0.09 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095 0.06 to 0.095
W
mA
< 400 < 400 < 400 < 500 < 500 < 500 < 500 < 500 < 400 < 300 < 300 < 200 < 200 < 200 < 200 < 300 < 350 < 400 < 500 < 500 < 500 < 600 < 600 < 600 < 750 < 1000 < 1000 < 1000 < 1000
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Document Number 85607 Rev. 3, 01-Apr-99
BZX85B...
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
2.0 Ptot – Total Power Dissipation ( W ) C D – Diode Capacitance ( pF ) 1000
1.6
100 VR = 0V VR = 2V VR = 5V VR = 20V VR = 30V
1.2
l=4mm
0.8 l=20mm 0.4 0 –50 l=10mm
10
1 0 50 100 150 200
95 9616
f = 1 MHz Tamb= 25°C 0 10 20 30 40 50 60
95 9612
Tamb – Ambient Temperature ( °C )
VZ – Z-Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
R thJA – Therm. Resist. Junction / Ambient ( K/W ) r Z – Differential Z-Resistance ( W ) 250
Figure 3. Diode Capacitance vs. Z–Voltage
1000 IZ=1mA 100 2mA 5mA 10mA 20mA 10
200
150 l 100 50 0 0 5 10 15 TL=constant 20 25 30 l
1 1
95 9615
10 VZ – Z-Voltage ( V )
100
95 9613
l – Lead Length ( mm )
Figure 4. Differential Z–Resistance vs. Z–Voltage
Z thp – Thermal Resistance for Pulse Cond. (K/W)
Figure 2. Thermal Resistance vs. Lead Length
1000 tp/T=0.01 tp/T=0.1 100 tp/T=0.5 tp/T=0.2 10 Single Pulse iZM=(–VZ+(VZ2+4rzj 1 10–1 100 101 tp – Pulse Length ( ms ) 102 tp/T=0.05 tp/T=0.02
DT=Tjmax–Tamb
RthJA=110K/W
DT/Zthp)1/2)/(2rzj)
103
95 9614
Figure 5. Thermal Response
Document Number 85607 Rev. 3, 01-Apr-99
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BZX85B...
Vishay Telefunken Dimensions in mm
Cathode Identification
technical drawings according to DIN specifications 94 9368
∅ 0.85 max.
∅ 2.5 max.
Standard Glass Case 54 B 2 DIN 41880 JEDEC DO 41 Weight max. 0.3 g
26 min.
4.1 max.
26 min.
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Document Number 85607 Rev. 3, 01-Apr-99
BZX85B...
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid thei.