HIGH-FREQUENCY AMPLIFIER JFET
2N3966
CASE 20-03, STYLE 1
TO-72 (TO-206AF)
JFET HIGH-FREQUENCY AMPLIFIER
—N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating ...
Description
2N3966
CASE 20-03, STYLE 1
TO-72 (TO-206AF)
JFET HIGH-FREQUENCY AMPLIFIER
—N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C (Free Air) Lead Temperature
(1/16" from Case for 10 Seconds) Storage Temperature Range
Symbol vDs Vdg vgs
"G
PD
TL
Tstg
Value 30 30 30 10 300
1.71
300
-55 to 200
Unit Vdc Vdc Vdc juA
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage G(l = 1.0 mA, v ds = 0)
Gate Reverse Current
(vG s = 20 v, v DS = o)
Drain Cutoff Current
(v D s =
10 v, Vqs
=
~ 70
v <
ta
=
150°C)
Gate Source Cutoff Voltage
do = 10 nA, vds = i° v > ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(vD s = 20 v, v G s = o) Drain-Source "ON" Voltage
(ID = 1.0 mA, Vqs = V)
Drain Reverse Current
(V DG = 20 V, Sl = A)
(25°C) (150°C)
Static Drain-Source On Res...
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