2N3330

2N3330 MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Total Device Dissipation (d T/\ = 25°C Derate above 25°C Storage Temperature Range Symbol VDG vgsr g Pd Tstg Value 20 20 10 0.3 2.0 - 65 to + 200 Unit Vdc Vdc mAdc Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (Iq = 10 /iAdc, V DS = 0) Gate Reverse Current (VGS = 10 Vdc, V DS = 0) (VGS = 10 Vdc, Vqs = 0, Ta = 150°C) ON CHARACTERISTICS Zero-Gate- Voltage Drain Current! 1) (VDS = -10Vdc,VG S = 0) Gate-Source Voltage ( V DG = -15 Vdc, Iq = 10/iAdc) Drain-Source Resistance (Iq = 100 /iAdc, Vqs = 0) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance(l) (VdS = - 10 Vdc, Id = 2.0 mAdc, f = 1.0 kHz) (VDS = -10 Vdc, Id = 20 mAdc, f = 10 MHz) Output Admittance (Vds ,= — 10 Vdc, Id = 2.0 mAdc, f = 1.0 kHz) Reverse Transfer Conductance (VDs = -10 Vdc, Id = 2.0 mAdc, f = 1.0 kHz) Input Conduct...