2N3421

2N3419 2N3420 2N3421 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3419, 2N3420, and 2N3421 are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current (PW<1.0ms, D.C.<50%) ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N3420 85 2N3419 2N3421 125 60 80 8.0 3.0 5.0 1.0 1.0 15 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3420 SYMBOL TEST CONDITIONS MIN MAX ICEX VCE=80V, VEB=0.5V - 500 ICEX VCE=120V, VEB=0.5V -- ICEX VCE=80V, VEB=0.5V, TC=150°C - 50 ICE...