2N3419 2N3420 2N3421
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTO...
2N3419 2N3420 2N3421
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3419, 2N3420, and 2N3421 are silicon
NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current (PW<1.0ms, D.C.<50%)
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N3420 85
2N3419 2N3421
125
60 80
8.0
3.0
5.0
1.0
1.0
15
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3420
SYMBOL TEST CONDITIONS
MIN MAX
ICEX
VCE=80V, VEB=0.5V
- 500
ICEX
VCE=120V, VEB=0.5V
--
ICEX
VCE=80V, VEB=0.5V, TC=150°C
- 50
ICE...