TECHNICAL DATA
NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/393
Devices
2N3418 2N3814S
2N3419 2N3...
TECHNICAL DATA
NPN MEDUIM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
Devices
2N3418 2N3814S
2N3419 2N3419S
2N3420 2N3420S
2N3421 2N3421S
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current tP ≤ 1.0 ms, duty cycle ≤ 50% Total Power Dissipation @ TA = +250C(1)
@ TC = +1000C(2) Operating & Storage Temperature Range 1) Derate linearly 5.72 mW/0C for TA > 250C 2) Derate linearly 150 mW/0C for TC > 1000C
Symbol VCEO VCBO VEBO
IC
PT
Top, Tstg
2N3418, S 2N3419, S 2N3420, S 2N3421, S
60 80 85 125
8.0 3.0 5.0 1.0 15
-65 to +200
ELECTRICAL CHARACTERISTICS Characteristics
OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 50 mAdc, IB = 0
Collector-Emitter Cutoff Current VBE = -0.5 Vdc, VCE = 80 Vdc VBE = -0.5 Vdc, VCE = 120 Vdc
Collector-Emitter Cutoff Current VCE = 45 Vdc, IB = 0 VCE = 60 Vdc, IB = 0
Emitter-Base Cutoff Current VEB = 6.0 Vdc, IC = 0 VEB = 8.0 Vdc, IC...