2N6211 2N6212 2N6213
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICO...
2N6211 2N6212 2N6213
SILICON
PNP POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon
PNP transistors designed for high speed switching and high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC
2N6211 275
225
2N6212 350 300 6.0 2.0 5.0 1.0 35
-65 to +200 5.0
2N6213 400
350
UNITS V V V A A A W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6211
2N6212
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
ICEV
VCE=250V, VBE=1.5V
- 0.5
--
ICEV
VCE=315V, VBE=1.5V
--
- 0.5
ICEV
VCE=360V, VBE=1.5V
--
--
ICEV
VCE=250V, VBE=1.5V, TC=100°C
- 5.0
--
ICEV
...