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2N5154L

Microsemi

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 Devices 2N5152 2N5152L 2N5154 2N5154L TECHNICAL DATA Qu...


Microsemi

2N5154L

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NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 Devices 2N5152 2N5152L 2N5154 2N5154L TECHNICAL DATA Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) VCEO VCBO VEBO IC(3, 4) PT Operating & Storage Temperature Range Tj, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 80 mW/0C for TC > +250C 4) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit 0C/W ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current V(BR)CE...




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