MPSW01

MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier Features This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage 30 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 40 5.0 IC Collector Current - Continuous 1.0 PD Total Device Dissipation Derate about 25°C 1.0 8.0 TJ , TSTG Operating Junction and Storage Temperature Range -55 to +150 * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Note : 1) These ratings are based on a maximum junction temperature 150 ‘C 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case* RθJA Thermal Resistance, Junction to Ambien* ...