2N4912

SILICON EPITAXIAL NPN TRANSISTOR 2N4912 Low Saturation Voltage Transistor In A Hermetic Metal Package Designed For Driver Circuits, Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector - Base Voltage 80V VCEO Collector - Emitter Voltage 80V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 1.0A IB Base Current 1.0A PD Total Power Dissipation at Tc = 25°C 25W Derate Above 25°C 0.143W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 7 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibi...