2N4234

Bipolar Transistor Collector 3 2 Base 1 Emitter Description: This is a silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device Dissipation(TC = +25°C), Derate above 25°C Operating Junction Temperature, Storage Temperature Range, Thermal Resistance, Junction-to-Case, Lead Temperature (During Soldering,1/16" from case, 60 sec max) Symbol VCBO VCEO VEBO IC PD TJ Tstg RthJC TL Rating 40 7 1 1 5.7 6 34 -65 to +200 -65 to +200 29 300 Unit V A W mW/°C °C °C/W °C www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.0 Bipolar Transistor Electrical Characteristics: (TA = +25°C ...