2N5551

Bipolar Transistor Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device Dissipation(TC = +25°C), Derate above 25°C Operating Junction Temperature, Range Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note-1) Symbol VCBO VCEO VEBO IC PD TJ Tstg RthJC Note: 1. RthJA is measured with the device soldered into a typical printed circuit board. Rating 180 160 6 600 625 5 1.5 12 -55 to +150 83.3 200 www.element14.com www.farnell.com www.newark.com Page <1> Unit V A mW mW/°C W mW/°C °C °C/W 23/04/13 V1.0 Bipolar Transistor Electrical Characteristics: (TA = +25°C Unless otherwise specified) Parameter Symbol Test Conditions Min Max Unit OFF Characteristics Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter...