Bipolar Transistor
Description:
A Silicon epitaxial NPN planer transistor in a TO-39 type package designed for use as d...
Bipolar
Transistor
Description:
A Silicon epitaxial
NPN planer
transistor in a TO-39 type package designed for use as drivers for high Power
transistors in general purpose amplifier and switching circuits.
Collector 3
2 Base
1 Emitter
Maximum Ratings:
Characteristic Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Base Current Total Device Dissipation Total Device Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol VCEO
(IE = 0), VCBO (IC = 0), VEBO
IC IB (TC = +25°C), Ptot (TA = +25°C), Ptot TJ Tstg RthJC RthJA
Rating
100
4 1 500 10 1 -65 to +200 -65 to +200 17.4 175
Unit V
A mA W
°C
°C/W
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Page <1>
23/04/13 V1.0
Bipolar
Transistor
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current
Symbol
ICBO ICEO ICEV
Emitter Cutoff Current Colle...
