2N5302

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 28.57 mW/0C for TA = +250C 2) Derate linearly 1.14 W/0C for TC = +1000C Symbol VCEO VCBO VEBO IC IB PT TJ, Tstg Symbol RθJC ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 200 mAdc, IB = 0 2N5302 2N5303 Collector-Emitter Cutoff Current VCE = 60 Vdc, IB = 0 2N5302 VCE = 80 Vdc, IB = 0 Emitter-Base Cutoff Current 2N5303 VEB = 5.0 Vdc, IC = 0 Collector-Emitter Cutoff Current VBE = 1.5 Vdc, VCE = 60 Vdc VBE = 1.5 Vdc, VCE = 80 Vdc Collector-Emitter Cutoff C...