Bipolar Transistor
Features:
High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A
NPN
Collector 3
2 Base
1 Emitter
Description:
High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits applications
Maximum Ratings:
Characteris...
