2N5682

2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-39 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier and switching applications where high voltages are required. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Current IB Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 2N5679 2N5681 100 2N5680 2N5682 120 100 120 4.0 1.0 0.5 1.0 10 -65 to +200 175 17.5 UNITS V V V A A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDI...