2N5322

2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series devices are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC IB PD TJ, Tstg ΘJA ΘJC 2N5320 2N5322 100 2N5321 2N5323 75 100 75 75 50 6.0 5.0 2.0 1.0 10 -65 to +200 175 17.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5320 2N5322 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=80V - 0.5 ICBO VCB=60V - - IEBO VEB=5.0V - 0.1 IEBO VEB=4.0V - - BVCEV IC=100μA, VBE=1.5V 100 - BVCEO IC=10mA 75 - BVEBO IE=100μA 6.0 - VCE(SAT) IC=500mA, IB=50mA (2N5320) - 0.5 VCE(SAT) IC=500mA, IB=50mA (2N5321) - - VCE(SAT) IC=500mA, IB=50mA (2N5322) - 0.7 VCE(SAT) IC=500mA, IB=50mA (2N5323) - - VBE(ON) VCE=4.0V, IC=500mA - 1.1 hFE VCE=4.0V, IC=500mA 30 200 hFE VCE=2.0V, IC=1.0A 10 - fT VCE=4.0V, IC=50mA, f=10MHz 50 - 2N5321 2N5323 MIN MAX - - - 5.0 - - - 0.5 75 - 50 - 5.0 - - - - 0.8 - - - 1.2 ...