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2N3634 2N3635
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC
140 140 5.0 1.0 1.0 5.0 -65 to +200 175 35
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=100V
IEBO
VEB=3.0V
BVCBO
IC=100μA
140
BVCEO
IC=10mA
140
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
0.65
fT VCE=30V, IC=30mA, f=100MHz (2N3634) 150
fT VCE=30V, I.