2N2652,A
CASE 654-07, STYLE 1 DUAL
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to 2N2060.A for graphs.
MAXIMUM RATINGS
Ratin...
2N2652,A
CASE 654-07, STYLE 1 DUAL
AMPLIFIER
TRANSISTOR
NPN SILICON
Refer to 2N2060.A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO
60
Vdc
VCBO
100
Vdc
VEBO
7.0
Vdc
'C 500 mAdc One Die Both Die
PD 0.3
0.6 Watt
1.72
3.43 mW/°C
Pd 1.0
2.0 Watts
5.7 11.4 mW/°C
TJ- Tstg
- 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
L Characteristic
OFF CHARACTERISTICS
Symbol
mACollector-Emitter Breakdown VoltageQ) (Ig = 20
dc, lg = 0)
Collector-Base Breakdown Voltage dc = 100 ^Adc, Ie = 0)
Emitter-Base Breakdown Voltage
100 MAdc, lc = 0)
Collector Cutoff Current (VC B (VC B
50 Vdc, l£ = 0) 50 Vdc, Ig = 0, Ta = 150°C)
V(BR)CEO v(BR)CBO v (BR)EBO
'CBO
Emitter Cuto...
