BCW32LT1G

BCW32LT1G General Purpose Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C PD 225 1.8 Thermal Resistance, Junction−to−Ambient RqJA 556 Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C PD 300 2.4 Thermal...