Datasheet
EV2A16A
256K x 16‐bit 3.3V Asynchronous Magnetoresistive RAM
Features
• Single 3.3V Power Supply • Industria...
Datasheet
EV2A16A
256K x 16‐bit 3.3V Asynchronous Magnetoresistive RAM
Features
Single 3.3V Power Supply Industrial Temperature Range (–40°C to 110°C) and Military Temperature Range
(–55°C to 125°C) Symmetrical High‐speed Read and Write with Fast Access Time (35 ns) Flexible Data Bus Control: 8 bit or 16 bit Access Equal Address and Chip‐enable Access Times Automatic Data Protection with Low‐voltage Inhibit Circuitry to Prevent Writes on Power Loss All Inputs and Outputs are
Transistor‐
transistor Logic (TTL) Compatible Fully Static Operation Full Nonvolatile Operation with 20 Years Minimum Data Retention
Introduction
The EV2A16A is a 4,194,304‐bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. The EV2A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins...