BDB02B

MAXIMUM RATINGS Rating Symbol BDB BDB BDB BDB Unit 02A 02B 02C 02D Collector-Emitter Voltage VCEO 45 60 80 100 Vdc Collector-Base Voltage VCES 45 60 80 100 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C ic PD 0.5 Adc 1.0 Watt 8.0 mW/°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS pd Tj. T stg 2.5 20 -55 to +150 Watt mW/°C °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient R«JC R^JC 50 125 °C/W °c/w BDB02A Thru BDB02D CASE 29-03, STYLE 1 TO-92 (TO-226AE) ONE WATT AMPLIFIER TRANSISTORS PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted) OFF CHARACTERISTICS Characteristic Collector-Emitter Voltage (IC = 10 mA, Ib = 0) BDB02A BDB02B BDB02C BDB02D Collector Cutoff Current (V C B = 45 V, El = 0) (V C B = 60 V, E...