BDB01A

MAXIMUM RATINGS Rating Symbol BDB BDB BDB BDB Unit 01 A 01 01C 01 Collector-Emitter Voltage VCEO 45 60 80 100 Vdc Collector-Base Voltage VCES 45 60 80 100 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous ic 0.5 Adc Total Device Dissipation @Ta = 25°C Derate above 25°C PD 1 .0 Watt 8.0 mW/°C @Total Device Dissipation Tq = 25°C Derate above 25°C pd 2.5 Watt 20 mW/°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Tj, T s tg -55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RwJC 50 °C/W Thermal Resistance, Junction to Ambient RyJC V25 ,°C/W BDB01A Thru BDB01D CASE 29-03, STYLE 1 TO-92 (TO-226AE) ONE WATT AMPLIFIER TRANSISTORS NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted) OFF CHARACTERISTICS Characteristic Collector-Emitter Voltage dC = 10 mA, Ib = 0) BDB01A BDB01B BDB01C BDB01D Collector Cutoff Current (V C B = 45 V, El = 0) (V C B = 60...