BC557

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon COLLECTOR 1 BC556,B BC557,A,B,C BC558B 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC556 BC557 BC558 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO –65 –45 –30 Vdc VCBO –80 –50 –30 Vdc VEBO –5.0 Vdc IC –100 mAdc PD 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) BC55...