BC338

NPN General Purpose Transistor P b Lead(Pb)-Free BC337/BC338 COLLECTOR 1 2 BASE 3 EMITTER TO-92 1 2 3 Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC337 BC338 Collector-Base voltage VCBO 50 30 Collector-Emitter voltage VCEO 45 25 Emitter-Base voltage VEBO 5.0 5.0 Collector Current Continuous lC 800 Total Device Dissipation Alumina Substrate,TA=25°C PD 625 Operating Junction Temperature Range TJ -55 to +150 Storage Junction Temperature Range Tstg -55 to +150 Unit V V V mA mW/°C °C °C ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=100µA, IE=0 Collector-Emitter Breakdown Voltage IC=10mA, IB=0 Emitter-Base Breakdown Voltage IC=10µA, IC=0 BC337 BC338 BC337 BC338 BC337 BC338 Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 50 30 45 25 5.0 - -V -V - Vdc WEITRON http://www.weitron.com.tw 1/3 30-Jun-06 BC337/BC338 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) (...