Elektronische Bauelemente
BC337 / BC338
NPN Plastic-Encapsulate Transistor
FEATURE
Power Dissipation
CLASSIFICATION O...
Elektronische Bauelemente
BC337 / BC338
NPN Plastic-Encapsulate
Transistor
FEATURE
Power Dissipation
CLASSIFICATION OF hFE
Product-Rank BC337-16
Product-Rank BC338-16
Range
100~250
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
G
TO-92
H
BC337-25 BC338-25 160~400
BC337-40 BC338-40 250~630
J AD
B K
E CF
1Collector 2Base 3Emitter
REF.
A B C D E F G H J K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
1
2
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction, Storage Temperature
BC337 BC338 BC337 BC338
VCBO
VCEO
VEBO IC PD
TJ, TSTG
50 30 45 25 5 800 625 150, -55~150
Unit
V
V
V mA mW °C
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
Elektronische Bauelemente
BC337 / BC338
NPN Plastic-Encapsulate
Transistor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown BC337
Voltage
BC338
Collector to Emitter Breakdown BC337
Voltage
BC338
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
BC337 BC338
Collector Cut-Off Current
BC337 BC338
Emitter Cut-Off Current
DC Cu...