Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diodes
These epitaxial passivated tuning diodes are designed for AFC applications in radio, TV, and general electronic–tuning. • Maximum Working Voltage of 20 V • Excellent Q Factor at High Frequencies • Solid–State Reliability to Replace Mechanical Tuning Methods
Order this document by MV1626/D
MV1626 thru MV1650
6.8 – 100 pF 20 VOLTS VOLTAGE–VARIABLE CAPACITANCE DIODES
2 Anode
1 Cathode
2
MAXIMUM RATINGS Rating
Reverse Voltage
Forward Current
Device Dissipation @ TA = 25°C Derate above 25°C
Symbol
VR IF PD
Value
20 250 400 2.67
Unit
Vdc mAdc mW mW/°C
1
CASE 51–02 DO–204AA (DO–7)
Junction Temperature
TJ +175 °C
Storage Temperature Range
Tstg – 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage (IR = 10 µAdc)
Reverse Voltage Leakage Current (VR = 15 Vdc, TA = 25°C)
Series Inductance (f = 250 MH.