MMBV3700LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for economical, high–volume consumer and industrial requirements. They are also available in surface mount. Long Reverse Recovery Time trr = 300 ns (Typ) Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability Low Series Resistance @ 100 MHz  RS = 0.7 Ohms (Typ) @ IF = 10 mAdc Reverse Breakdown Voltage = 200 V (Min) 3 Cathode SOT–23 1 Anode 2 Cathode TO–92 1 Anode MAXIMUM RATINGS Rating Symbol MPN3700 MMBV3700LT1 Reverse Voltage VR 200 Total Power Dissipation PD @ TA = 25°C 280 Derate above 25°C 2.8 200 2.0 Junction Temperature Storage Temperature Range DEVICE MARKING TJ Tstg +125 –55 to +150 MMBV3700LT1 = 4R ELECTRICAL CHARACTERISTICS (TA = 25...