MMBV3102LT1G

MMBV3102LT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Current Device Dissipation @ TA = 25°C Derate above 25°C VR 30 Vdc IF 200 mAdc PD 225 mW 1.8 mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http...