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MBT3946DW1T1

ON Semiconductor

Dual General Purpose Transistor

MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−...


ON Semiconductor

MBT3946DW1T1

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Description
MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel Device Marking: MBT3946DW1T1 = 46 Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish MAXIMUM RATINGS Rating Collector −Emitter Voltage (NPN) (PNP) Collector −Base Voltage (NPN) (PNP) Emitter −Base Voltage (NPN) (PNP) Collector Current − Continuous (NPN) (PNP) Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value 40 −40 60 −40 6.0 −5.0 200 −20...




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