MPQ3798

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors PNP Silicon 14 13 12 11 10 9 8 PNP 1234567 MAXIMUM RATINGS Rating Symbol MPQ3798 MPQ3799 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCBO VEBO IC –40 –60 –60 –5.0 –50 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc mAdc Total Device Dissipation @ TA = 25°C(1) Derate above 25°C PD 0.5 4.0 0.9 Watts 7.2 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 0.825 6.7 2.4 Watts 19.2 m/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic RqJC Junction to Case RqJA Junction to Ambient Unit Thermal Resistance Each Die Effective, 4 Die 151 250 °C/W 52 139 °C/W Coupling Factors Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4 34 2.0 70 % 26 % ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Sy...