MPQ3467

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor PNP Silicon 14 13 12 11 10 9 8 PNP 1234567 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCBO VEBO IC –40 –40 –5.0 –1.0 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc Adc Total Device Dissipation @ TA = 25°C(1) Derate above 25°C PD 650 5.2 1500 12 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.25 10 3.2 Watts 25.6 mW/°C Operating and Storage Junction TJ, Tstg Temperature Range –55 to +150 °C THERMAL CHARACTERISTICS Characteristic RqJC Junction to Case RqJA Junction to Ambient Unit Thermal Resistance Each Die Effective, 4 Die 100 193 °C/W 39 83.2 °C/W Coupling Factors Q1–Q4 or Q2–Q3 45 55 % Q1–Q2 or Q3–Q4 5.0 10 % ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min ...