Silicon Epicap Diodes
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Epicap Diodes
Designed for general frequency control and tuning applicati...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Epicap Diodes
Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package
31
Cathode
Anode
SC–70/SOT–323
31
Cathode
Anode
SOT–23
21
Cathode
Anode
TO–92
MAXIMUM RATINGS
Rating
Symbol MBV109T1 MMBV109LT1 MV209 Unit
Reverse Voltage Forward Current
VR IF
30 Vdc 200 mAdc
Forward Power Dissipation
@ TA = 25°C Derate above 25°C
PD
280 2.8
200 200 mW 2.0 1.6 mW/°C
Junction Temperature Storage Temperature Range
TJ Tstg
+125 –55 to +150
°C °C
DEVICE MARKING
MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Reverse Breakdown Voltage (IR = 10 µAdc)
Reverse Voltage Leakage Current (VR = 25 Vdc)
Diode C...
Similar Datasheet