MBD101G, MMBD101LT1G
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for use in...
MBD101G, MMBD101LT1G
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package.
Features
Low Noise Figure − 6.0 dB Typ @ 1.0 GHz Very Low Capacitance − Less Than 1.0 pF High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
VR
Forward Power Dissipation
TA = 25°C
MBD101 MMBD101LT1
PF
Value 7.0
280 225
Unit V
mW
Derate above 25°C
MBD101
MMBD101LT1
2.2 mW/°C 1.8
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and relia...
