VN0610LL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement 3DRAIN VN0610LL 2 GATE MAXIMUM RATINGS ® 1 SOURCE Rating Symbol Value Unit Drain – Source Voltage Drain – Gate Voltage (RGS = 1 MΩ) Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID IDM PD 60 60 ± 20 ± 40 190 1000 400 3.2 Vdc Vdc Vdc Vpk mAdc mW mW/°C Operating and Storage Temperature Range THERMAL CHARACTERISTICS TJ, Tstg – 55 to +150 °C Characteristics Symbol Max Unit Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16” from case for 10 seconds RθJA TL 312.5 300 °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Drain – Source Breakdown Voltage (VGS = 0, ID = 100 µA) V(BR)DSS Zero Gate Voltage Drain Current (VDS = ...