P2N2907A
Amplifier Transistor
PNP Silicon
Features
• These are Pb--Free Devices*
MAXIMUM RATINGS
Rating Collector--Emi...
P2N2907A
Amplifier
Transistor
PNP Silicon
Features
These are Pb--Free Devices*
MAXIMUM RATINGS
Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol VCEO VCBO VEBO IC PD
Value --60 --60 --5.0 --600 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
--55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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