NSVBSS63LT1G

BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Emitter Voltage RBE = 10 kW Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCER IC −100 −110 −100 Vdc Vdc mAdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD mW 225 1.8 mW/°C Thermal Resistance Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W mW 300 mW/°C 2.4 Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA TJ, Tstg 417 −55 to +150 °C/W °C Stresses exceeding those listed in the Maximum Ratings t...