Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL ...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL
TRANSISTOR
BF199
TO-92 Plastic Package
CE B
RF
Transistor
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous Power Dissipation @ Ta=25ºC
Derate Above 25ºC Power Dissipation @ Tc=25ºC
Derate Above 25ºC Operating And Storage Junction Temperature Range
SYMBOL VCEO VCBO VEBO IC PD
PD
Tj, Tstg
VALUE 25 40 4.0 100 350 2.8 1.0 8.0
- 55 to +150
THERMAL RESISTANCE Junction to case Junction to Ambient in free air
Rth (j-c) Rth (j-a)
125 357
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=100µA, IE=0
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Collector Cut off Current
ICBO
VCB=20V, IE = 0
DC Current Gain
hFE IC=7mA, VCE=10V
Base Emitter On V...
