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MPSW56

Part Number	MPSW56
Manufacturer	WEJ
Description	PNP Transistor
Published	May 11, 2017
Detailed Description	RoHS MPSW56 MPSW56 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 1 W (Tamb=25℃) .,LCollector current ICM: -50...
Datasheet	MPSW56 PDF File

Overview

RoHS MPSW56 MPSW56 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 1 W (Tamb=25℃) .
,LCollector current ICM: -500 Collector-base voltage mA OV(BR)CBO: -80 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-92 1.
EMITTER 2.
BASE 3.
COLLECTOR 123 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency WEJCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(...

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